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| Bulletin PD-20517 rev. H 07/04 15MQ040N SCHOTTKY RECTIFIER 3 Amp IF(AV) = 3 Amp VR = 40V Major Ratings and Characteristics Characteristics IF VRRM IFSM @ tp = 5 s sine VF TJ @ 2Apk, TJ=125C range DC Description/ Features The 15MQ040N Schottky rectifier is designed to be used for low-power applications where a reverse voltage of 40 volts is ancountered and surface mountable is required. 15MQ040N Units 3 40 330 0.43 - 40 to 150 A V A V C Applications Switching power supplies Meter protection Reverse protection for power input to PC board circuits Battery isolation and charging Low threshold voltage diode Free-wheeling or by-pass diode Low voltage clamp Features Surface mountable Extremely low forward voltage Improved reverse blocking voltage capability relative to other similar size Schottky Compact size Case Styles 15MQ040N SMA www.irf.com 1 15MQ040N Bulletin PD-20517 rev. H 07/04 Voltage Ratings Part number VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) 15MQ040N 40 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current * See Fig. 4 IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current * See Fig. 6 Non-Repetitive Avalanche Energy Repetitive Avalanche Current 15MQ Units 2.1 330 140 6.0 1.0 A Conditions 50% duty cycle @ TL = 105 C, rectangular wave form. On PC board 9mm2 island(.013mm thick copper pad area) 5s Sine or 3s Rect. pulse 10ms Sine or 6ms Rect. pulse TJ = 25 C, IAS = 1A, L = 12mH Following any rated load condition and with rated VRRM applied A mJ A Electrical Specifications Parameters VFM Max. Forward Voltage Drop * See Fig. 1 (1) 15MQ 0.42 0.49 0.34 0.43 Units V V V V mA mA V m pF nH V/s @ 1A @ 2A @ 1A @ 2A TJ = 25 C TJ = 125 C TJ = TJ max. Conditions TJ = 25 C TJ = 125 C VR = rated VR IRM Max. Reverse Leakage Current (1) * See Fig. 2 0.5 20 0.26 64.6 134 2.0 10000 VF(TO) Threshold Voltage rt CT LS Forward Slope Resistance Typical Junction Capacitance Typical Series Inductance VR = 10VDC, TJ = 25C, test signal = 1Mhz Measured lead to lead 5mm from package body (Rated VR) dv/dt Max. Voltage Rate of Change (1) Pulse Width < 300s, Duty Cycle < 2% Thermal-Mechanical Specifications Parameters TJ Tstg Max. Storage Temperature Range 15MQ -40 to 150 80 Units C C C/W DC operation Conditions Max. Junction Temperature Range (*) -40 to 150 RthJA Max. Thermal Resistance Junction to Ambient wt Approximate Weight Case Style Device Marking (*) dPtot dTj < 1 Rth( j-a) 0.07(0.002) g (oz.) SMA IR3F Similar D-64 thermal runaway condition for a diode on its own heatsink 2 www.irf.com 15MQ040N Bulletin PD-20517 rev. H 07/04 100 10 TJ = 150C R everse Current - I R (mA) 10 125C 100C 75C 0.1 50C 1 0.01 25C Instantaneous F orward Current - I F (A) 0.001 TJ= 150C TJ= 125C 1 TJ= 25C 0 5 10 15 20 25 30 35 40 Reverse Voltage - V R (V) Fig. 2 - Typical Peak Reverse Current Vs. Reverse Voltage 1000 Junc tion Capac itanc e - C T (pF) TJ = 25C 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Forward Voltage Drop - V FM (V) 10 0 5 10 15 20 25 30 35 40 45 Fig. 1 - Maximum Forward Voltage Drop Characteristics Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage www.irf.com 3 15MQ040N Bulletin PD-20517 rev. H 07/04 150 Allowable Case T emperature - (C) 140 1.6 Average Power Loss - (Watts ) DC 130 120 110 100 90 80 70 60 50 40 30 0 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 RMSLimit DC S quare wave (D = 0.50) 80% Rated V R applied see note (2) 0.5 1 1.5 2 2.5 3 0.5 1 1.5 2 2.5 3 Average Forward Current - I F(AV) (A) Average Forward Current - I F(AV) (A) Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current 1000 Non-R epetitive S urge Current - I FS (A) M At Any R ated Load Condition And With Rated V RRM Applied Following S urge 100 10 100 1000 10000 S quare Wave Pulse Duration - t p (microsec) Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 15MQ040N Bulletin PD-20517 rev. H 07/04 Outline Table Device Marking: IR3F CATHODE AN OD E 1.40 (.055) 1.60 (.062) 2.50 (.098) 2.90 (.114) 1 2 4.00 (.157) 4.60 (.181) .152 (.006) .305 (.012) 2.00 (.078) 2.44 (.096) 0.76 (.030) 1.52 (.060) .103 (.004) .203 (.008) 4.80 (.188) 5.28 (.208) 1 P O LA R I TY 2 PA R T N U M B ER 1.47 MIN. (.058 MIN.) 2.10 MAX. (.085 MAX. ) 1.27 MIN. (.050 MIN.) 5.53 (.218) SOLDERING PAD Outline SMA Dimensions in millimeters and (inches) For recommended footprint and soldering techniques refer to application note #AN-994 Marking & Identification Each device has 2 rows for identification. The first row designates the device as manufactured by International Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID. IR3F VOLTAGE CURRENT IR LOGO YYWWX SITE ID WEEK 2nd digit of the YEAR "Y" = 1st digit of the YEAR "standard product" "P" = "Lead-Free" www.irf.com 5 15MQ040N Bulletin PD-20517 rev. H 07/04 Tape & Reel Information Dimensions in millimetres and (inches) Ordering Information Table Device Code 15 1 M 2 Q 3 040 4 N 5 TR 6 7 1 2 3 4 5 6 7 - Current Rating M = SMA Q = Schottky Q Series Voltage Rating (040 = 40V) N = New SMA none = Box (1000 pieces) TR = Tape & Reel (7500 pieces) none = Standard Production PbF = Lead-Free Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 07/04 6 www.irf.com |
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